HEATING EFFECTS IN REACTIVE ETCHING OF NB AND NB2O5

被引：11

作者：

CHEN, MM ^{[1
]}

LEE, YH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2116031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2118 / 2123

页数：6

共 24 条

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[6] LOADING EFFECT AND TEMPERATURE-DEPENDENCE OF ETCH RATE IN CF4 PLASMA
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[8] FAVREAU D, UNPUB
[9] THE REACTION OF FLUORINE-ATOMS WITH SILICON
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[10] REACTIVE ION ETCHING OF NIOBIUM
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