OPTICAL-PROPERTIES OF INDIUM-DOPED SILICON RE-INSPECTED

被引：10

作者：

SCHELTER, W ^{[1
]}

HELL, W ^{[1
]}

HELBIG, R ^{[1
]}

SCHULZ, M ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 28期

关键词：

D O I：

10.1088/0022-3719/15/28/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：5839 / 5850

页数：12

相关论文

共 28 条

[1] STATISTICAL-MECHANICS OF BAND STATES AND IMPURITY STATES IN SEMICONDUCTORS
ALMBLADH, CO
REES, GJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (31): : 4575 - 4601
[2] SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS
ANDERSON, WW
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 235 - 245
[3] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539
[4] BINDING-ENERGY OF SHALLOW ACCEPTORS IN GROUP-4 ELEMENTS AND 3-5 COMPOUNDS
BALDERESCHI, A
LIPARI, NO
[J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 489 - 493
[5] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
[6] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON
BARBER, HD
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &
[7] BARON R, 1977, APPL PHYS LETT, V30, P53
[8] IMPURITY CONCENTRATION BROADENING OF ACCEPTOR LINES IN INDIUM-DOPED SILICON
BHATIA, KL
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (02): : 723 - &
[9] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS
BURSTEIN, E
PICUS, G
HENVIS, B
WALLIS, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74
[10] OBSERVATION OF ADDITIONAL EXCITED-STATE LINES OF INDIUM IN SILICON
COVINGTON, BC
HARRIS, RJ
SPRY, RJ
[J]. PHYSICAL REVIEW B, 1980, 22 (02): : 778 - 781