SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON INDUCED BY ELECTRON-IRRADIATION AT ROOM-TEMPERATURE

被引：63

作者：

LULLI, G ^{[1
]}

MERLI, PG ^{[1
]}

ANTISARI, MV ^{[1
]}

机构：

[1] ENERGIA NUCL & ENERGIE ALTERNAT,CNR,DIV SCI MAT,CTR RIC ENERGET CASACCIA,I-00100 ROMA,ITALY

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.36.8038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8038 / 8042

页数：5

共 22 条

[1] DOSE-RATE EFFECTS ON THE DYNAMIC ANNEALING MECHANISM IN P+-IMPLANTED SILICON [J].

BERTI, M ;

DRIGO, AV ;

LULLI, G ;

MERLI, PG ;

ANTISARI, MV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01) :77-85

[2]

BERTI M, 1986, PHYS STATUS SOLIDI A, V94, P85

[3] PHENOMENOLOGICAL MODEL FOR PHOTOCRYSTALLIZATION PROCESS [J].

BOURGOIN, JC ;

GERMAIN, P .

PHYSICS LETTERS A, 1975, 54 (06) :444-446

[4] SELF-ANNEALING OF ION-IMPLANTED SILICON - 1ST EXPERIMENTAL RESULTS [J].

CEMBALI, GF ;

MERLI, PG ;

ZIGNANI, F .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :808-810

[5]

CORBETT JW, 1965, PHYS REV, V2, pA555

[6]

COSSLETT VE, 1979, ELECT MICROSCOPY ANA, P277

[7] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON [J].

ELLIMAN, RG ;

JOHNSON, ST ;

POGANY, AP ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :310-315

[8]

GERASIMENKO NN, 1973, SOV PHYS SEMICOND+, V6, P1588

[9]

HOBBS LW, 1983, QUANTITATIVE ELECTRO, P399

[10] CHANNELING DEPENDENCE OF ION-BEAM-INDUCED EPITAXIAL RECRYSTALLIZATION IN SILICON [J].

LINNROS, J ;

HOLMEN, G .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1513-1517

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