HOLLOW-CATHODE ETCHING OF SI AND SIO2 USING CF4 AND H2

被引：4

作者：

FORTUNOWILTSHIRE, G ^{[1
]}

OEHRLEIN, GS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 05期

关键词：

D O I：

10.1149/1.2096937

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1447 / 1449

页数：3

共 8 条

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[7] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J].

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[8] X-RAY PHOTOEMISSION SPECTROSCOPY CHARACTERIZATION OF SILICON SURFACES AFTER CF4/H2 MAGNETRON ION ETCHING - COMPARISONS TO REACTIVE ION ETCHING [J].

OEHRLEIN, GS ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1989-1993

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