EXPERIMENTAL-EVIDENCE FOR RELAXATION PHENOMENA IN HIGH-PURITY SILICON

被引：11

作者：

CAVICCHI, BT

HAEGEL, NM

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.63.195

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：195 / 198

页数：4

共 17 条

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