SINGLE CRYSTALLINE COSI2 LAYERS FORMED BY CO IMPLANTATION INTO SI

[1] BOURRET A, 1987, INST PHYS CONF SER, P39

[2] MICROSTRUCTURE OF HETEROEPITAXIAL SI/COSI2/SI FORMED BY CO IMPLANTATION INTO (100) AND (111) SI [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 244 - 246

[3] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[4] JAUSSAUD C, 1988, MATER RES SOC S P, V107, P17

[5] FORMATION OF BURIED EPITAXIAL CO SILICIDES BY ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) : 276 - 279

[6] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[7] TUNG RT, 1986, MATER RES SOC S P, V67, P211

[8] SYNTHESIS OF HETEROEPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 669 - 671

[9] AMORPHOUS AND CRYSTALLINE OXIDE PRECIPITATES IN OXYGEN IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 628 - 630

[10] VANOMMEN AH, IN PRESS

[1] BOURRET A, 1987, INST PHYS CONF SER, P39

[2] MICROSTRUCTURE OF HETEROEPITAXIAL SI/COSI2/SI FORMED BY CO IMPLANTATION INTO (100) AND (111) SI [J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 244 - 246

[3] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[4] JAUSSAUD C, 1988, MATER RES SOC S P, V107, P17

[5] FORMATION OF BURIED EPITAXIAL CO SILICIDES BY ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) : 276 - 279

[6] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[7] TUNG RT, 1986, MATER RES SOC S P, V67, P211

[8] SYNTHESIS OF HETEROEPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 669 - 671

[9] AMORPHOUS AND CRYSTALLINE OXIDE PRECIPITATES IN OXYGEN IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 628 - 630

[10] VANOMMEN AH, IN PRESS