GROWTH-KINETICS OF REFRACTORY-METAL THIN-FILMS SPUTTERED BY RF-DC COUPLED MAGNETRON SPUTTERING IN AR OR NE GAS PLASMA

R.f. power and d.c. bias have been simultaneously applied to the target in a conventional magnetron-sputtering system in order to control the growth kinetics of refractory-metal thin films by using an inert gas for sputtering. The film-growth coefficient (deposition rate/ion current) of metal thin films such as those of W, Mo, and Ta is significantly influenced by the Ar ion energies incident on the W, Mo, and Ta targets, as demonstrated by applying d.c. target bias voltage in the r.f.-d.c. coupled magnetron-sputtering system. The film-growth coefficients for W, Mo, and Ta with Ar gas are consistent with the sputtering yield, showing that the deposition rate for refractory metal and for Ne or Ar gas are well controlled by changing the target d.c. bias.