STUDY OF DEEP-LEVEL DEFECT BEHAVIOR IN RAPID THERMAL ANNEALED FE-DOPED SEMIINSULATING INP

被引：9

作者：

KADOUN, A

MARRAKCHI, G

KALBOUSSI, A

BARBIER, D

GUILLOT, G

机构：

[1] Laboratoire de Physique de la Matière (URA CNRS 358), INSA de Lyon, 69621 Villeurbanne Cedex, Bat 502

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 33卷 / 2-3期

关键词：

INDIUM PHOSPHIDES; IRON; DEFECTS; THERMAL PROPERTIES;

D O I：

10.1016/0921-5107(94)01186-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of rapid thermal annealing (RTA) on deep level defects behaviour in Fe-doped semi-insulating InP has been studied by photoinduced current transient spectroscopy. Three samples were annealed at 600 degrees C, 700 degrees C and 800 degrees C for a fixed plateau duration of 15 s in a RTA commercially-available furnace. We show that RTA leads to the disappearance of the usually observed 0.66 eV Fe-related level and the formation of three deep traps having the activation energies 0.1, 0.31 and 0.54 eV. The possible involvement of phosphorus vacancy related complexes and the metastability of iron in the compensation mechanism after annealing is suggested.

引用

页码：188 / 191

页数：4

共 18 条

[1] OPTICAL TRANSIENT CURRENT SPECTROSCOPY OF DEEP LEVELS IN SEMIINSULATING INDIUM-PHOSPHIDE [J].