BARRIER HEIGHT ENHANCEMENT OF SCHOTTKY DIODES ON N-IN0.53GA0.47AS BY CRYOGENIC PROCESSING

被引：29

作者：

LEE, HJ ^{[1
]}

ANDERSON, WA ^{[1
]}

HARDTDEGEN, H ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH GMBH, INST SCHICHT & IONENTECH, W-5170 JULICH, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky contacts on n-In0.53Ga0.47As have been made by metal deposition on substrates cooled to a temperature of 77 K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height phi(B), was found to be increased from approximately 0.2 to 0.60 eV with Ag metal. For the low temperature diode, the saturation current density, J0, was about four orders smaller than for the room temperature diode. Deep level transient spectroscopy studies of n-InGaAs low temperature diodes exhibited one electron trap located at E(c)-0.23 eV. This trap level was identified as a bulk trap.

引用

页码：1939 / 1941

页数：3

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