MECHANISMS OF SPUTTERING OF SI IN A CL2 ENVIRONMENT BY IONS WITH ENERGIES DOWN TO 75 EV

被引：66

作者：

OOSTRA, DJ

HARING, A

VANINGEN, RP

DEVRIES, AE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：315 / 322

页数：8

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