QUANTITATIVE DEFECT ETCHING OF GAAS ON SI - IS IT POSSIBLE

被引：24

作者：

STIRLAND, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2432 / 2434

页数：3

共 17 条

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[3]

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[5] MISFIT AND THREADING DISLOCATIONS IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MOCVD [J].

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[6]

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[7] ETCHING TECHNIQUE TO REVEAL DISLOCATIONS IN THIN GAAS FILMS GROWN ON SI SUBSTRATES [J].

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SOGA, T ;

MIKURIYA, N ;

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UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L159-L160

[8] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (23) :1928-1930

[9] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

ABERNATHY, CR ;

CARUSO, R ;

VERNON, SM ;

SHORT, KT ;

BROWN, JM ;

CHU, SNG ;

STAVOLA, M ;

HAVEN, VE .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :775-783

[10]

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