INTRAWELL EXCITON TRANSPORT IN MONOLAYER-FLAT GAAS/ALGAAS SINGLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

TU, CW ^{[1
]}

MILLER, RC ^{[1
]}

PETROFF, PM ^{[1
]}

KOPF, RF ^{[1
]}

DEVEAUD, B ^{[1
]}

DAMEN, TC ^{[1
]}

SHAH, J ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：610 / 612

页数：3

共 14 条

[1] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES
BIMBERG, D
CHRISTEN, J
FUKUNAGA, T
NAKASHIMA, H
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1191 - 1197
[2] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
BIMBERG, D
MARS, D
MILLER, JN
BAUER, R
OERTEL, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1014 - 1021
[3] DYNAMICS OF EXCITON TRANSFER BETWEEN MONOLAYER-FLAT ISLANDS IN SINGLE QUANTUM-WELLS
DEVEAUD, B
DAMEN, TC
SHAH, J
TU, CW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 828 - 830
[4] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
FUKUNAGA, T
KOBAYASHI, KLI
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L510 - L512
[5] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[6] PHOTOLUMINESCENCE STUDIES OF THE EFFECTS OF INTERRUPTION DURING THE GROWTH OF SINGLE GAAS/AI0.37GA0.63AS QUANTUM-WELLS
MILLER, RC
TU, CW
SPUTZ, SK
KOPF, RF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1245 - 1247
[7] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS
MILLER, RC
KLEINMAN, DA
TSANG, WT
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 1134 - 1136
[8] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[9] INTERFACE STRUCTURE AND OPTICAL-PROPERTIES OF QUANTUM-WELLS AND QUANTUM BOXES
PETROFF, PM
CIBERT, J
GOSSARD, AC
DOLAN, GJ
TU, CW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1204 - 1208
[10] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY
SAKAKI, H
TANAKA, M
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L417 - L420

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