PLANAR, LINEAR GAAS DETECTOR AMPLIFIER ARRAY WITH AN INSULATING ALGAAS SPACING LAYER BETWEEN THE DETECTOR AND TRANSISTOR LAYERS

被引：4

作者：

ANDERSON, GW

PAPANICOLAOU, NA

MA, DI

MACK, IAG

MODOLO, JA

KUB, FJ

YOUNG, CW

THOMPSON, PE

BOOS, JB

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：550 / 552

页数：3

共 11 条

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[7] PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR [J].

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[9] MONOLITHIC INTEGRATION OF GAAS PHOTOCONDUCTORS WITH A FIELD-EFFECT TRANSISTOR [J].

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[10] A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS [J].

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