BEHAVIOR OF A-SINH AND A-SIONH FILMS IN CONDENSED WATER

被引：29

作者：

OSENBACH, JW ^{[1
]}

KNOLLE, WR ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 11期

关键词：

D O I：

10.1149/1.2069076

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The etch rates of plasma-deposited silicon nitride and silicon oxynitride films in condensed water were studied as a function of water temperature, pH of the solution, and film composition. The etch rates for all films at water temperatures between 50 and 125-degrees-C were between 0.2 and 10.0 nm/h. The activation energies were between 0.6 and 1.0 eV. Where water condensation on devices is possible, water etching of the passivation should be considered as a potential failure mode.

引用

页码：3346 / 3351

页数：6

共 19 条

[11] ELECTRICAL, PHYSICAL, AND CHEMICAL CHARACTERISTICS OF PLASMA-ASSISTED CHEMICAL-VAPOR DEPOSITED SEMI-INSULATING A-SIN-H AND THEIR USE AS A RESISTIVE FIELD SHIELD FOR HIGH-VOLTAGE INTEGRATED-CIRCUITS [J].