AN HEMT INPUT CHARGE PREAMPLIFIER FOR NANOSECONDS SIGNAL-PROCESSING TIME

被引：7

作者：

BERTUCCIO, G

PULLIA, A

机构：

[1] Dipartimento di Elettronica e Informazione, Politecnico di Milano

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 02期

关键词：

D O I：

10.1109/23.372134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. We present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance.

引用

收藏

页码：66 / 72

页数：7

相关论文

共 16 条

[1] HIGH-RESOLUTION X-RAY SPECTROSCOPY WITH SILICON DRIFT DETECTORS AND INTEGRATED ELECTRONICS [J].

BERTUCCIO, G ;

SAMPIETRO, M ;

FAZZI, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (03) :538-542

[2] A METHOD FOR THE DETERMINATION OF THE NOISE PARAMETERS IN PREAMPLIFYING SYSTEMS FOR SEMICONDUCTOR RADIATION DETECTORS [J].

BERTUCCIO, G ;

PULLIA, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (11) :3294-3298

[3]

BERTUCCIO G, UNPUB IEEE ELECTRON

[4]

BERTUCCIO G, 1994, APR P GAAS94 INT S G

[5]

BERTUCCIO G, 1993, 20TH P INT S GAAS RE, P111

[6] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J].

DRUMMOND, TJ ;

MASSELINK, WT ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1986, 74 (06) :773-822

[7] SUBOPTIMAL FILTERING OF 1/F-NOISE IN DETECTOR CHARGE MEASUREMENTS [J].

GATTI, E ;

MANFREDI, PF ;

SAMPIETRO, M ;

SPEZIALI, V .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 297 (03) :467-478

[8]

GATTI E, 1986, RIV NUOVO CIMENTO, V9

[9] AN OPTO-ELECTRONIC FEEDBACK PREAMPLIFIER FOR HIGH-RESOLUTION NUCLEAR SPECTROSCOPY [J].

GOULDING, FS ;

WALTON, J ;

MALONE, DF .

NUCLEAR INSTRUMENTS & METHODS, 1969, 71 (03) :273-&

[10] NOISE BEHAVIOR OF 1-MU-M GATE-LENGTH MODULATION-DOPED FETS FROM 10(-2) TO 10(8) HZ [J].

LIU, SM ;

DAS, MB ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :453-455