ELEMENTARY PROCESSES IN ATOMIC HYDROGEN-ASSISTED GAAS MOLECULAR-BEAM EPITAXY

被引：7

作者：

OKADA, Y

FUJITA, T

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6B期

关键词：

ATOMIC HYDROGEN-ASSISTED EPITAXY; MOLECULAR BEAM EPITAXY (MBE); ATOMIC HYDROGEN; GAAS STEP-FLOW GROWTH; GROWTH KINETICS; RHEED;

D O I：

10.1143/JJAP.34.L768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been shown that a continual irradiation of atomic H generated by a hydrogen cracker during the growth of GaAs in molecular beam epitaxy (MBE) serves to promote a step-flow growth mode on GaAs(001) substrates. Fundamentally important observations related to the elementary processes of the growth have been presented based on reflection high-energy electron diffraction (RHEED) measurements. A growth model for the atomic hydrogen-assisted GaAs MBE is therein proposed.

引用

收藏

页码：L768 / L771

页数：4

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