A NEW MODEL FOR THE THERMAL-OXIDATION KINETICS OF SILICON

被引：36

作者：

NICOLLIAN, EH ^{[1
]}

REISMAN, A ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期

关键词：

D O I：

10.1007/BF02652105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：263 / 272

页数：10

共 32 条

[11] PARALLEL OXIDATION MECHANISM FOR SI OXIDATION IN DRY O2 [J].

HAN, CJ ;

HELMS, CR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1297-1302

[12] SILICON OXIDATION STUDIES - A REVISED MODEL FOR THERMAL-OXIDATION [J].

IRENE, EA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5416-5420

[13] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&

[14] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

LIGENZA, JR ;

SPITZER, WG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :131-136

[15] OXIDATION OF SILICON BY HIGH-PRESSURE STEAM [J].

LIGENZA, JR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :73-76

[16] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J].

MASSOUD, HZ ;

PLUMMER, JD ;

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1745-1753

[17]

MASSOUD HZ, 1983, G5021 STANF U TECH R

[18] SI-]SIO2 TRANSFORMATION - INTERFACIAL STRUCTURE AND MECHANISM [J].

OURMAZD, A ;

TAYLOR, DW ;

RENTSCHLER, JA ;

BEVK, J .

PHYSICAL REVIEW LETTERS, 1987, 59 (02) :213-216

[19] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].

PLISKIN, WA ;

GNALL, RP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873

[20] ETCHING AND POLISHING BEHAVIOR OF GE AND SI WITH HI [J].

REISMAN, A ;

BERKENBLIT, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :812-+

← 1 2 3 4 →