GATE OXIDE DEFECTS CONNECTED TO SUB-MICRON ISOLATION REGIONS SUBJECTED TO SELECTIVE OXIDATION

被引：4

作者：

ITSUMI, M

NAKAJIMA, O

MINEGISHI, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1149/1.2119908

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1160 / 1164

页数：5

共 15 条

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[4]

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[9] FRAMED RECESSED OXIDE SCHEME FOR DISLOCATION-FREE PLANAR SI STRUCTURES [J].

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[10] DEFECTS IN A GATE OXIDE GROWN AFTER THE LOCOS PROCESS [J].

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