SI3N4/SI/IN0.53GA0.47AS DEPLETION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH IMPROVED STABILITY

被引：13

作者：

MUI, DSL

WANG, Z

BISWAS, D

DEMIREL, AL

TERAGUCHI, N

REED, J

MORKOC, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,CHAMPAIGN,IL 61820

[2] UNIV ILLINOIS,COORDINATED SCI LAB,CHAMPAIGN,IL 61820

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-mum gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.

引用

收藏

页码：3291 / 3293

页数：3

相关论文

共 12 条

[1]

AKAZAWA M, 1989, JPN J APPL PHYS 2, V28, pL2095

[2] PROPERTIES OF SIO2/SI/GAAS STRUCTURES FORMED BY SOLID-PHASE EPITAXY OF AMORPHOUS SI ON GAAS [J].

CALLEGARI, A ;

SADANA, DK ;

BUCHANAN, DA ;

PACCAGNELLA, A ;

MARSHALL, ED ;

TISCHLER, MA ;

NORCOTT, M .

APPLIED PHYSICS LETTERS, 1991, 58 (22) :2540-2542

[3] HIGH-EFFICIENCY GAINAS MICROWAVE MISFETS [J].

GARDNER, PD ;

BECHTLE, D ;

NARAYAN, SY ;

COLVIN, SD ;

PACZKOWSKI, J .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :443-446

[4] CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE [J].

GARDNER, PD ;

NARAYAN, SY ;

YUN, YH .

THIN SOLID FILMS, 1984, 117 (03) :173-190

[5] CHARACTERIZATION OF INGAAS SURFACE PASSIVATION STRUCTURE HAVING AN ULTRATHIN SI INTERFACE CONTROL LAYER [J].

HASEGAWA, H ;

AKAZAWA, M ;

ISHII, H ;

URAIE, A ;

IWADATE, H ;

OHUE, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :867-873

[6] INVESTIGATIONS OF THE SI3N4/SI/N-GAAS INSULATOR-SEMICONDUCTOR INTERFACE WITH LOW INTERFACE TRAP DENSITY [J].

MUI, DSL ;

BISWAS, D ;

REED, J ;

DEMIREL, AL ;

STRITE, S ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2511-2513

[7] ELECTRON-CYCLOTRON RESONANCE ASSISTED LOW-TEMPERATURE ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION OF SI USING SILANE [J].

MUI, DSL ;

FANG, SF ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1887-1889

[8] A NEW CIRCUIT MODEL FOR TUNNELING RELATED TRAPPING AT INSULATOR-SEMICONDUCTOR INTERFACES IN ACCUMULATION [J].

MUI, DSL ;

REED, J ;

BISWAS, D ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :553-558

[9] GA0.47IN0.53AS ENHANCEMENT-MODE AND DEPLETION-MODE MISFETS WITH VERY HIGH TRANSCONDUCTANCE [J].

SPLETTSTOSSER, J ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :763-764

[10] CURRENT DRIFT MECHANISM IN IN0.53GA0.47AS DEPLETION MODE METAL-INSULATOR FIELD-EFFECT TRANSISTORS [J].

TAILLEPIED, M ;

GOURRIER, S .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :978-980