MICROPLASMA CHARACTERISTICS IN INP-IN0.53GA0.47AS LONG WAVELENGTH AVALANCHE PHOTODIODES

被引：4

作者：

MAGNEA, N ^{[1
]}

PETROFF, PM ^{[1
]}

CAPASSO, F ^{[1
]}

LOGAN, RA ^{[1
]}

FOY, PW ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期

关键词：

ELECTRIC FIELD EFFECTS - Analysis - SEMICONDUCTING INDIUM COMPOUNDS - Plasmas - SEMICONDUCTOR DIODES; PHOTODIODE;

D O I：

10.1063/1.95855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characterization of microplasmas has been performed on InP-In//0//. //5//3Ga//0//. //4//7As avalanche photodiodes using electron induced current and low-temperature cathodoluminescence measurements. Microplasmas are shown to be associated with a local increase of the electric field resulting from doping fluctuations which are tentatively associated with impurity segregation at crystal imperfections.

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页码：66 / 68

页数：3

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