TWO-DIMENSIONAL DEVICE SIMULATOR FOR GATE LEVEL CHARACTERIZATION

被引：7

作者：

TOMIZAWA, M

YOKOYAMA, K

YOSHII, A

SUDO, T

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 09期

关键词：

D O I：

10.1016/0038-1101(82)90181-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：913 / 916

页数：4

共 10 条

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[8] AN ACCURATE DESIGN METHOD OF BIPOLAR-DEVICES USING A TWO-DIMENSIONAL DEVICE SIMULATOR [J].

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[9] THRESHOLD-SENSITIVITY MINIMIZATION OF SHORT-CHANNEL MOSFETS BY COMPUTER-SIMULATION [J].

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