AIN SPUTTERED FILM PROPERTIES PREPARED AT LOW GAS-PRESSURES BY FACING TARGET SYSTEM

被引：10

作者：

TOMINAGA, K

IMAI, H

SHIRAI, M

机构：

[1] The University of Tokushima, Tokushima, 770

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 10期

关键词：

AIN FILM; PLANAR MAGNETRON SPUTTERING; FILM DEGRADATION; FACING TARGET SPUTTERING SYSTEM;

D O I：

10.1143/JJAP.30.2574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several properties of sputtered AlN films prepared in N2 gas by planar magnetron sputtering with facing targets were investigated. Highly c-axis-oriented films with columnar structure were obtained at the pressure range of 10(-3) Torr of N2 gas. Film degradations such as the decrease of the degree of c-axis orientation, film coloring, and film peeling were also observed at lower gas pressures below 1 x 10(-3) Torr. From the results of optical transmittance and film composition estimation by energy-dispersion X-ray spectroscopy, these film degradation were related to the excess of N atoms in the film growth process.

引用

页码：2574 / 2580

页数：7

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