ON THE RELIABILITY OF 1.3-MU-M INGAASP/INP EDGE-EMITTING LEDS FOR OPTICAL-FIBER COMMUNICATION

被引：5

作者：

ETTENBERG, M ^{[1
]}

OLSEN, GH ^{[1
]}

HAWRYLO, FZ ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1984年 / 2卷 / 06期

关键词：

D O I：

10.1109/JLT.1984.1073711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1016 / 1023

页数：8

共 15 条

[1] COMPARISON OF SURFACE-EMITTING AND EDGE-EMITTING LEDS FOR USE IN FIBER-OPTICAL COMMUNICATIONS [J].

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ETTENBERG, M .

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[2] A STUDY OF FAR-FIELD PATTERNS FROM HIGH-PERFORMANCE 1.3-MU-M INGAASP-INP EDGE-EMITTING LEDS [J].

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RAO, EVK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :354-360

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[4] REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES [J].

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NUESE, CJ .

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[5] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].

ETTENBERG, M ;

NUESE, CJ ;

KRESSEL, H .

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[6] METALLIZATION FOR DIODE-LASERS [J].

ETTENBERG, M ;

LADANY, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :799-802

[7] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J].

ETTENBERG, M ;

NUESE, CJ ;

APPERT, JR ;

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ENSTROM, RE .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :37-66

[8] 1.3 MU-M LPE-GROWN AND VPE-GROWN IN GAASP EDGE-EMITTING LEDS [J].

OLSEN, GH ;

HAWRYLO, FZ ;

CHANNIN, DJ ;

BOTEZ, D ;

ETTENBERG, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (10) :2130-2134

[9]

OLSEN GH, 1980, PROGR CRYSTAL GROWTH, V2

[10] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

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