CHEMICAL VAPOR-DEPOSITION OF METALS FOR INTEGRATED-CIRCUIT APPLICATIONS

[91] CHEMICAL VAPOR-DEPOSITION OF THIN-FILM PLATINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 686 - 693

[92] ROBINSON M, 1984, 9TH P INT C CVD ECS

[93] SAXENA AN, 1984, SOLID STATE TECHNOL, V27, P93

[94] SEDGEWICK TO, 1979, 7TH P INT C CVD ECS

[95] SETO DK, 1971, 2ND P INT C CVD, P659

[96] SHAUFFHAUSER AC, 1967, P C CVD REFRACTORY M

[97] SHAW JM, 1970, RCA REV, V31, P306

[98] PREPARATION OF MO/SI SCHOTTKY BARRIERS BY CHEMICAL VAPOR-DEPOSITION OF MOLYBDENUM ONTO EPITAXIAL SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1984, 115 (04) : 291 - 298

[99] CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED NI-(0.05-0,20 WT. PERCENT) B-ALLOYS [J]. THIN SOLID FILMS, 1984, 113 (03) : 225 - 234

[100] PHOTODEPOSITION OF ALUMINUM-OXIDE AND ALUMINUM THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 454 - 456

[91] CHEMICAL VAPOR-DEPOSITION OF THIN-FILM PLATINUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 686 - 693

[92] ROBINSON M, 1984, 9TH P INT C CVD ECS

[93] SAXENA AN, 1984, SOLID STATE TECHNOL, V27, P93

[94] SEDGEWICK TO, 1979, 7TH P INT C CVD ECS

[95] SETO DK, 1971, 2ND P INT C CVD, P659

[96] SHAUFFHAUSER AC, 1967, P C CVD REFRACTORY M

[97] SHAW JM, 1970, RCA REV, V31, P306

[98] PREPARATION OF MO/SI SCHOTTKY BARRIERS BY CHEMICAL VAPOR-DEPOSITION OF MOLYBDENUM ONTO EPITAXIAL SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1984, 115 (04) : 291 - 298

[99] CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED NI-(0.05-0,20 WT. PERCENT) B-ALLOYS [J]. THIN SOLID FILMS, 1984, 113 (03) : 225 - 234

[100] PHOTODEPOSITION OF ALUMINUM-OXIDE AND ALUMINUM THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 454 - 456