Plasma-deposited silicon nitride films formed under different temperature and gas composition conditions were hydrolyzed in a saturated water vapor environment at 85 degrees C. The extent of hydrolysis was measured by monitoring the change in the Si-O-Si absorbance area at similar to 1070 cm(-1) with a Fourier transform infrared spectrometer. Films deposited at electrode temperatures below 250 degrees C and films formed at high NH3:SiH4 flow ratios had significant hydrolysis rates. The hydrolysis of the films was linear with time and occurred at the oxide/nitride interface. N-H bond concentration and film density were the primary factors affecting the hydrolysis rate.
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页码:194 / 198
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[1]
ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135