Low-Temperature Hydrolysis (Oxidation) of Plasma-Deposited Silicon Nitride Films

被引：24

作者：

Chiang, J. N. ^{[1
]}

Ghanayem, S. G. ^{[1
]}

Hess, D. W. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Chem Engn Dept, Berkeley, CA 94720 USA

来源：

CHEMISTRY OF MATERIALS | 1989年 / 1卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/cm00002a006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Plasma-deposited silicon nitride films formed under different temperature and gas composition conditions were hydrolyzed in a saturated water vapor environment at 85 degrees C. The extent of hydrolysis was measured by monitoring the change in the Si-O-Si absorbance area at similar to 1070 cm(-1) with a Fourier transform infrared spectrometer. Films deposited at electrode temperatures below 250 degrees C and films formed at high NH3:SiH4 flow ratios had significant hydrolysis rates. The hydrolysis of the films was linear with time and occurred at the oxide/nitride interface. N-H bond concentration and film density were the primary factors affecting the hydrolysis rate.

引用

页码：194 / 198

页数：5

共 31 条

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