RADIATION-DAMAGE IN SIO2/SI INDUCED BY VUV PHOTONS

[1] ABSOLUTE FLUORESCENT QUANTUM EFFICIENCY OF SODIUM SALICYLATE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (06) : 747 - &

[2] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[3] CARDINAUD GC, 1989, APPL SURF SCI, V36, P322

[4] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141

[5] USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1324 - 1329

[6] SPUTTERING YIELD AND RADIATION-DAMAGE BY NEUTRAL BEAM BOMBARDMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1417 - 1420

[7] MIZUTANI T, 1989, MATER RES SOC SYMP P, V128, P605

[8] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 420 - 422

[9] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 99 - +

[10] OXIDE BREAKDOWN DUE TO CHARGE ACCUMULATION DURING PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3113 - 3118

[1] ABSOLUTE FLUORESCENT QUANTUM EFFICIENCY OF SODIUM SALICYLATE [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (06) : 747 - &

[2] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[3] CARDINAUD GC, 1989, APPL SURF SCI, V36, P322

[4] EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4137 - 4141

[5] USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1324 - 1329

[6] SPUTTERING YIELD AND RADIATION-DAMAGE BY NEUTRAL BEAM BOMBARDMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1417 - 1420

[7] MIZUTANI T, 1989, MATER RES SOC SYMP P, V128, P605

[8] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 420 - 422

[9] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 99 - +

[10] OXIDE BREAKDOWN DUE TO CHARGE ACCUMULATION DURING PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3113 - 3118