LOW-TEMPERATURE DIFFUSION OF DOPANT ATOMS IN SILICON DURING INTERFACIAL SILICIDE FORMATION

被引：77

作者：

WITTMER, M

TU, KN

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2010 / 2020

页数：11

共 39 条

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