DENSIFICATION OF THERMAL SIO2 DUE TO INTRINSIC OXIDATION STRESSING

被引:16
作者
FARGEIX, A
GHIBAUDO, G
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D O I
10.1088/0022-3727/17/11/020
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O59 [应用物理学];
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页码:2331 / 2336
页数:6
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[1]  
Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0
[2]   VISCOUS-FLOW OF THERMAL SIO2 [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293
[3]   STRESS IN THERMAL SIO2 DURING GROWTH [J].
EERNISSE, FP .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :8-10
[4]   DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW [J].
FARGEIX, A ;
GHIBAUDO, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7153-7158
[5]   A REVISED ANALYSIS OF DRY OXIDATION OF SILICON [J].
FARGEIX, A ;
GHIBAUDO, G ;
KAMARINOS, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2878-2880
[6]   THIN OXIDE-FILMS OF SILICON BY HIGH-PRESSURE OXIDATION [J].
HIRAYAMA, M ;
MIYOSHI, H ;
TSUBOUCHI, N ;
ABE, H .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (05) :919-929
[7]   A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].
IRENE, EA ;
TIERNEY, E ;
ANGILELLO, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597
[8]   RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J].
IRENE, EA ;
DONG, DW ;
ZETO, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :396-399
[9]  
LANDAU LD, 1975, THEORY ELASTICITY
[10]   VISCOELASTIC BEHAVIOR OF OXIDE-FILMS ON SILICON-CRYSTALS [J].
NISHINO, Y ;
IMURA, T .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :193-200