EVOLUTION OF SURFACE-STATES DENSITY OF SI-WET THERMAL SIO2 INTERFACE DURING BIAS-TEMPERATURE TREATMENT

被引：13

作者：

SAMINADAYAR, K ^{[1
]}

PFISTER, JC ^{[1
]}

机构：

[1] UNIV SCI & MED GRENOBLE, CEN GRENOBLE, DEPT RECH FONDAMENTALE, PHYS SOLIDE SECT 85X, F-38041 GRENOBLE, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 11期

关键词：

D O I：

10.1016/0038-1101(77)90010-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：891 / 896

页数：6

共 19 条

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