ON PREDICTING THE CHEMICAL-REACTIVITY OF METAL-SEMICONDUCTOR INTERFACES

被引：54

作者：

MCGILP, JF

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 12期

关键词：

D O I：

10.1088/0022-3719/17/12/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2249 / 2254

页数：6

共 19 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2] PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE [J].

BABALOLA, IA ;

PETRO, WG ;

KENDELEWICZ, T ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :762-765

[3] DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS [J].

BAUER, RS ;

BACHRACH, RZ ;

HANSSON, GV ;

CHIARADIA, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :674-680

[4] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[5] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[6] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[7] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J].

DERRIEN, J ;

ARNAUDDAVITAYA, F .

SURFACE SCIENCE, 1977, 65 (02) :668-686

[8] METAL GALLIUM SELENIDE INTERFACES - OBSERVATION OF THE TRUE SCHOTTKY LIMIT [J].

HUGHES, GJ ;

MCKINLEY, A ;

WILLIAMS, RH ;

MCGOVERN, IT .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (06) :L159-L164

[9] NICKEL AND COPPER ON CLEAVED INDIUM-PHOSPHIDE - STRUCTURE, METALLURGY AND ELECTRONIC-PROPERTIES [J].

HUGHES, GJ ;

MCKINLEY, A ;

WILLIAMS, RH .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12) :2391-2406

[10]

Hultgren RR, 1973, SELECTED VALUES THER

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