共 15 条
- [1] INTERSTITIAL DOPING OF AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852
- [2] CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2083 - 2091
- [3] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551
- [4] THE CONDUCTIVITY NEAR A MOBILITY EDGE [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06): : L75 - L82
- [5] THE RANDOM-PHASE MODEL IN NON-CRYSTALLINE SYSTEMS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (05): : 941 - 942
- [6] MOTTNF, 1985, PHIL MAG B, V51, P19
- [7] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 377 - 392
- [8] TEMPERATURE-DEPENDENCE OF THE MOBILITY EDGE IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7073 - 7075
- [9] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246
- [10] PHOTOCONDUCTIVITY STUDIES OF THE MOBILITY EDGE IN AMORPHOUS-SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (05): : 781 - 796