TEMPERATURE-DEPENDENCE OF SILICON DOPING OF GAAS BY SIH4 AND SI2H6 IN ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

HAGEMAN, PR

TANG, X

DECROON, MHJM

GILING, LJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90139-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：249 / 254

页数：6

共 14 条

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[3]

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[4]

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JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :543-550

[8] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[9] GAS-PHASE AND SURFACE-REACTIONS IN SI DOPING OF GAAS BY SILANES [J].

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JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :594-601

[10] 3-DIMENSIONAL FLOW EFFECTS IN SILICON CVD IN HORIZONTAL REACTORS [J].

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