MICROCRYSTALLINE SILICON DEPOSITED BY GLOW-DISCHARGE DECOMPOSITION OF HEAVILY DILUTED SILANE

被引：14

作者：

CHOU, JS ^{[1
]}

SAH, WJ ^{[1
]}

LEE, SC ^{[1
]}

CHANG, TC ^{[1
]}

WANG, JC ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,INST MAT SCI & ENGN,TAIPEI,TAIWAN

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1992年 / 32卷 / 03期

关键词：

D O I：

10.1016/0254-0584(92)90211-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth kinetics, electrical and structural properties of microcrystalline silicon formed by direct glow discharge decomposition of heavily hydrogen diluted silane were studied. It is found that by changing the volume fraction of silane to below 5%, phase transition from amorphous to microcrystalline silicon occurred. However, when the silane fraction is further reduced to below 2%, the microcrystalline silicon converts back to the amorphous phase. Several kinds of measurements, i.e. transmission electron microscopy, infrared absorption, conductivity, etc., were used to study the various properties of the films. It is found that the grain size of microcrystalline silicon increases from 30-50 nm as the volume fraction of silane decreases from 5% down to about 2% and then decreases again. A model is given to explain the observed phenomena.

引用

页码：273 / 279

页数：7

共 21 条

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