STRUCTURAL-PROPERTIES OF CDTE-ZNTE STRAINED-LAYER SUPERLATTICE GROWN ON GAAS BY HOT-WALL EPITAXY

被引：17

作者：

SUGIYAMA, I

HOBBS, A

UEDA, O

SHINOHARA, K

TAKIGAWA, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdTe-ZnTe strained-layer superlattices (SLSs) were grown on GaAs by hot-wall epitaxy. The individual layer thickness of the SLS is well controlled and the thickness fluctuation is less than +/- 1 monolayer. High-resolution transmission electron microscopy images show coherent SLS growth. We found that two-thirds of the threading dislocations can be reduced by inserting the SLS in CdTe/GaAs.

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页码：2755 / 2757

页数：3

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