ELECTRICAL-PROPERTIES OF INTRINSIC P-TYPE SHALLOW LEVELS IN HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY IN THE (111)B ORIENTATION

被引：20

作者：

BOUKERCHE, M

SIVANANTHAN, S

WIJEWARNASURIYA, PS

SOU, IK

FAURIE, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576118

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：311 / 313

页数：3

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