A PHOTOLUMINESCENCE STUDY OF CD-RELATED CENTERS IN INP

被引：31

作者：

SWAMINATHAN, V

DONNELLY, VM

LONG, J

机构：

来源：

关键词：

D O I：

10.1063/1.336272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4565 / 4572

页数：8

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[38] PHOTO-LUMINESCENCE OF THERMALLY TREATED N+ SI-DOPED AND SEMI-INSULATING CR-DOPED GAAS SUBSTRATES
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[39] COMPENSATION IN GE-DOPED P-TYPE GA1-XALX AS GROWN BY LIQUID-PHASE EPITAXY
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