SITE SYMMETRY AND DEFORMATION-POTENTIAL CONSTANTS OF AL-X ACCEPTORS IN SILICON

被引：7

作者：

CHANDRASEKHAR, HR ^{[1
]}

RAMDAS, AK ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1067 / 1072

页数：6

共 16 条

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[8]

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