CHARACTERIZATION OF WSIX GATE METAL PROCESS FOR GAAS-MESFETS

被引：1

作者：

WILLER, J

HEINZLE, M

SCHLEICHER, L

RISTOW, D

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90577-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：548 / 555

页数：8

共 21 条

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