EFFECT OF OXYGEN ON MINORITY-CARRIER LIFETIME AND RECOMBINATION CURRENTS IN SI1-XGEX HETEROSTRUCTURE DEVICES

被引：27

作者：

GHANI, T ^{[1
]}

HOYT, JL ^{[1
]}

NOBLE, DB ^{[1
]}

GIBBONS, JF ^{[1
]}

TURNER, JE ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p+-i-n diode structure is presented which is suitable for determining the recombination lifetime in thin Si(1-x)Ge(x) layers grown on Si. Electrical measurements and computer simulations are used to extract carrier lifetimes in Si(1-x)Ge(x) layers with various oxygen concentrations. The minority-carrier lifetime increases dramatically as the oxygen concentration in the Si(1-x)Ge(x) decreases from 3 X 10(20) to less than 3 X 10(17) cm-3. Lifetimes extracted from the p+-i-n diodes are consistent with those obtained from measurements on heterojunction bipolar transistors with high oxygen concentrations in the Si1-xGex base.

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页码：1317 / 1319

页数：3

相关论文

共 14 条

[1]

GRONET CM, 1988, THESIS STANFORD U

[2] LIMITED REACTION PROCESSING - GROWTH OF SI1-XGEX/SI FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS [J].

HOYT, JL ;

KING, CA ;

NOBLE, DB ;

GRONET, CM ;

GIBBONS, JF ;

SCOTT, MP ;

LADERMAN, SS ;

ROSNER, SJ ;

NAUKA, K ;

TURNER, J ;

KAMINS, TI .

THIN SOLID FILMS, 1990, 184 :93-106

[3]

HOYT JL, 1991, ICEM 90, P551

[4] SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KAMINS, TI ;

NAUKA, K ;

KRUGER, JB ;

HOYT, JL ;

KING, CA ;

NOBLE, DB ;

GRONET, CM ;

GIBBONS, JF .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (11) :503-505

[5] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J].

KING, CA ;

HOYT, JL ;

GRONET, CM ;

GIBBONS, JF ;

SCOTT, MP ;

TURNER, J .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :52-54

[6] BANDGAP AND TRANSPORT-PROPERTIES OF SI1-XGEX BY ANALYSIS OF NEARLY IDEAL SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KING, CA ;

HOYT, JL ;

GIBBONS, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2093-2104

[7] ELECTRICAL AND MATERIAL QUALITY OF SI1-XGEX/SI P-N HETEROJUNCTIONS PRODUCED BY LIMITED REACTION PROCESSING [J].

KING, CA ;

HOYT, JL ;

NOBLE, DB ;

GRONET, CM ;

GIBBONS, JF ;

SCOTT, MP ;

KAMINS, TI ;

LADERMAN, SS .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) :159-161

[8] ELECTRICAL CHARACTERIZATION OF INSITU EPITAXIALLY GROWN SI P-N-JUNCTIONS FABRICATED USING LIMITED REACTION PROCESSING [J].

KING, CA ;

GRONET, CM ;

GIBBONS, JF ;

WILSON, SD .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :229-231

[9]

KING CA, 1989, THESIS STANFORD U

[10] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J].

KOHAMA, Y ;

FUKUDA, Y ;

SEKI, M .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :380-382