ADMITTANCE MEASUREMENTS OF METAL-INSULATOR SEMICONDUCTOR-DEVICES IN P-TYPE HGCDTE

被引：19

作者：

NEMIROVSKY, Y

BLOOM, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575491

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2710 / 2715

页数：6

共 9 条

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[7]

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[9] CHARACTERIZATION OF ANODIC SULFIDE FILMS ON HG0.78CD0.22TE [J].

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