FACTORS INFLUENCING THE PHOTOLUMINESCENCE INTENSITY OF INP

被引：5

作者：

LESTER, SD

KIM, TS

STREETMAN, BG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 10期

关键词：

D O I：

10.1149/1.2108372

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2208 / 2209

页数：2

共 10 条

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[2] LUMINESCENCE STUDY OF RAPID LAMP ANNEALING OF SI-IMPLANTED INP [J].

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[5]

LESTER SD, UNPUB

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NOGUCHI, Y .

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[7] PROPERTIES OF AMBIENT-ENHANCED PHOTO-LUMINESCENCE FROM INP AND GAAS-SURFACES [J].

NAGAI, H ;

TOHNO, S ;

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5446-5448

[8] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP [J].

NAGAI, H ;

NOGUCHI, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1544-1545

[9] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

OFFSEY, SD ;

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WARREN, AC ;

KIRCHNER, PD ;

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PETTIT, GD .

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[10] PHOTO-LUMINESCENT PROPERTIES OF GAAS-GAALAS, GAAS-OXIDE, AND GAAS-ZNS HETEROJUNCTIONS [J].

WOODALL, JM ;

PETTIT, GD ;

CHAPPELL, T ;

HOVEL, HJ .

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