RELATIONSHIP BETWEEN SHORT CHANNEL BEHAVIOR AND LONG-TERM STABILITY OF N-CHANNEL ENHANCEMENT AND DEPLETION MOSFETS

被引：2

作者：

BAUER, F

BALK, P

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90182-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：797 / 806

页数：10

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