VERY HIGH-CURRENT GAIN INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：2

作者：

KYONO, CS ^{[1
]}

GERRARD, ND ^{[1
]}

PINZONE, CJ ^{[1
]}

MAZIAR, CM ^{[1
]}

DUPUIS, RD ^{[1
]}

机构：

[1] STC DEF SYST,PAIGNTON TQ4 7BE,DEVON,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

TRANSISTORS; BIPOLAR DEVICES; VAPOR DEPOSITION;

D O I：

10.1049/el:19910026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A maximum DC current gain (beta) of 2.4 x 10(4) and small-signal current gain (h(fe)) of 4.9 x 10(4) were obtained for InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). The excellent HBT gain performance is attributed to the exceptional material quality, the good control over p-type dopant diffusion at the base-emitter heterojunction, and the existence of a doping-induced drift field in the base.

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页码：40 / 41

页数：2

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