THE ROLE OF HYDROGEN IN RADIATION-INDUCED DEFECT FORMATION IN POLYSILICON GATE MOS DEVICES

被引：99

作者：

SCHWANK, JR

FLEETWOOD, DM

WINOKUR, PS

DRESSENDORFER, PV

TURPIN, DC

SANDERS, DT

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1152 / 1158

页数：7

共 30 条

[11]

McGarrity J M, 1978, PHYSICS SIO2 ITS INT, V428

[12] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[13] CHEMICAL AND STRUCTURAL ASPECTS OF IRRADIATION BEHAVIOR OF SIO2-FILMS ON SILICON [J].

REVESZ, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2102-2107

[14] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON [J].

REVESZ, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :122-130

[15] CHARACTERIZATION OF ANNEALING OF CO-60 GAMMA-RAY DAMAGE AT THE SI/SIO2 INTERFACE [J].

SABNIS, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4094-4099

[16] RADIATION-INDUCED INTERFACE-STATE GENERATION IN MOS DEVICES [J].

SCHWANK, JR ;

WINOKUR, PS ;

SEXTON, FW ;

FLEETWOOD, DM ;

PERRY, JH ;

DRESSENDORFER, PV ;

SANDERS, DT ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1178-1184

[17]

SCHWANK JR, 1985, J RAD EFFECTS RES EN, V4, P10

[18]

SCHWANK JR, IN PRESS J RAD EFFEC, V5

[19] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

[20]

TRIPLETT BB, 1987, APPL PHYS LETT, V50, P1163

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