EFFECT OF HYDROGEN PLASMA TREATMENT ON CF4 PLASMA-ETCHING CHARACTERISTICS OF SINGLE-CRYSTAL, POLYCRYSTALLINE, AND AMORPHOUS-SILICON

被引：3

作者：

AGRAWAL, N

TAREY, RD

CHOPRA, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575777

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2701 / 2704

页数：4

共 15 条

[1] ETCHING PATTERNS IN AMORPHOUS-SILICON
BARE, HF
NEUDECK, GW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02): : 239 - 241
[2] DRY ETCHING OF N-TYPE AND P-TYPE POLYSILICON - PARAMETERS AFFECTING THE ETCH RATE
BERG, S
NENDER, C
BUCHTA, R
NORSTROM, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1600 - 1603
[3] CHEMICAL ETCHING FOR THE EVALUATION OF HYDROGENATED AMORPHOUS-SILICON FILMS
CHU, TL
CHU, SS
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1783 - 1784
[4] EPHARTH LM, 1979, J ELECTROCHEM SOC, V126, P1419
[5] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201
[6] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[7] AMORPHOUS-SILICON AS A RESIST MATERIAL
GUPTA, PK
CHOPRA, KL
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 17 - 19
[8] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION
HIRATA, K
OZAKI, Y
ODA, M
KIMIZUKA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1323 - 1331
[9] HIROSE M, 1983, AMORPHOUS SEMICONDUC, V16, P67
[10] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW
KERN, W
SCHNABLE, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 647 - 657