THE GROWTH AND CHARACTERIZATION OF DEVICE QUALITY INP/GA1-XINXASYP1-Y DOUBLE HETEROSTRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE USING TRIMETHYLINDIUM

被引：33

作者：

MIRCEA, A

MELLET, R

ROSE, B

ROBEIN, D

THIBIERGE, H

LEROUX, G

DASTE, P

GODEFROY, S

OSSART, P

POUGNET, AM

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期

关键词：

D O I：

10.1007/BF02659633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 213

页数：9

共 24 条

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[24] THE EFFECT OF GAS TEMPERATURE ON THE GROWTH OF INP BY ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION USING TRIMETHYL INDIUM AND PH3 SOURCES [J].

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