ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES

被引：221

作者：

HASEGAWA, H

SAWADA, T

机构：

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90430-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：119 / 140

页数：22

相关论文

共 82 条

[61] ANODIC AL2O3 INP INTERFACE FOR APPLICATION TO ENHANCEMENT MISFETS
SAWADA, T
ISHII, K
HASEGAWA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 397 - 402
[62] INP HIGH MOBILITY ENHANCEMENT MISFETS USING ANODICALLY GROWN DOUBLE-LAYER GATE INSULATOR
SAWADA, T
HASEGAWA, H
[J]. ELECTRONICS LETTERS, 1982, 18 (17) : 742 - 743
[63] SAWADA T, 1983, UNPUB I PHYS C SER, V65
[64] EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
JOHNSON, NM
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 481 - 484
[65] INTERFACIAL REACTIONS IN PLASMA-GROWN NATIVE OXIDE-GAAS STRUCTURES
SCHWARTZ, GP
SCHWARTZ, B
GRIFFITHS, JE
SUGANO, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2269 - 2273
[66] RAMAN-SCATTERING FROM ANODIC OXIDE-GAAS INTERFACES
SCHWARTZ, GP
SCHWARTZ, B
DISTEFANO, D
GUALTIERI, GJ
GRIFFITHS, JE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 205 - 207
[67] INTERFACIAL ARSENIC GROWTH IN ANODIC OXIDE-GAAS STRUCTURES
SCHWARTZ, GP
GUALTIERI, GJ
GRIFFITHS, JE
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 410 - 415
[68] SURFACE-POTENTIAL AND SURFACE-STATE DENSITY IN ANODIZED GAAS MOS CAPACITORS
SHIMANO, A
MORITANI, A
NAKAI, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 939 - 940
[69] THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI-SIO2 INTERFACE
SINGH, J
MADHUKAR, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 884 - 886
[70] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
SPICER, WE
CHYE, PW
SKEATH, PR
SU, CY
LINDAU, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433

← 1 2 3 4 5 6 7 8 9 →