ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES

被引：221

作者：

HASEGAWA, H

SAWADA, T

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(83)90430-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：119 / 140

页数：22

共 82 条

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