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U-SHAPED DISTRIBUTIONS AT SEMICONDUCTOR INTERFACES AND THE NATURE OF THE RELATED DEFECT CENTERS
被引:17
作者
:
FLIETNER, H
论文数:
0
引用数:
0
h-index:
0
FLIETNER, H
机构
:
来源
:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
1985年
/ 91卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210910120
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:153 / 164
页数:12
相关论文
共 57 条
[31]
STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES
MIKAWA, RE
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0
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MIKAWA, RE
LENAHAN, PM
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0
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LENAHAN, PM
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(06)
: 550
-
552
[32]
ELECTRONIC CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES
MONCH, W
论文数:
0
引用数:
0
h-index:
0
MONCH, W
[J].
THIN SOLID FILMS,
1983,
104
(3-4)
: 285
-
299
[33]
CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS
MONCH, W
论文数:
0
引用数:
0
h-index:
0
MONCH, W
[J].
SURFACE SCIENCE,
1983,
132
(1-3)
: 92
-
121
[34]
MONCH W, 1984, FESTKOR-ADV SOLID ST, V24, P229
[35]
A MODEL OF INTERFACE STATES AND CHARGES AT THE SI-SIO2 INTERFACE - ITS PREDICTIONS AND COMPARISONS WITH EXPERIMENTS
NGAI, KL
论文数:
0
引用数:
0
h-index:
0
NGAI, KL
WHITE, CT
论文数:
0
引用数:
0
h-index:
0
WHITE, CT
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(01)
: 320
-
337
[36]
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[37]
INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS
POINDEXTER, EH
论文数:
0
引用数:
0
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0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
POINDEXTER, EH
CAPLAN, PJ
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0
引用数:
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h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
CAPLAN, PJ
DEAL, BE
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FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
RAZOUK, RR
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(02)
: 879
-
884
[38]
ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION
POINDEXTER, EH
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0
引用数:
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XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
POINDEXTER, EH
GERARDI, GJ
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引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
GERARDI, GJ
RUECKEL, ME
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机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
RUECKEL, ME
CAPLAN, PJ
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0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CAPLAN, PJ
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
BIEGELSEN, DK
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
56
(10)
: 2844
-
2849
[39]
POINDEXTER EH, 1981, SPRINGER SERIES ELEC, V7, P150
[40]
GENERATION ANNEALING KINETICS OF INTERFACE STATES ON OXIDIZED SILICON ACTIVATED BY 10.2-EV PHOTOHOLE INJECTION
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
SAH, CT
SUN, JYC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
SUN, JYC
TZOU, JJT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
TZOU, JJT
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
: 8886
-
8893
←
1
2
3
4
5
6
→
共 57 条
[31]
STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES
MIKAWA, RE
论文数:
0
引用数:
0
h-index:
0
MIKAWA, RE
LENAHAN, PM
论文数:
0
引用数:
0
h-index:
0
LENAHAN, PM
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(06)
: 550
-
552
[32]
ELECTRONIC CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES
MONCH, W
论文数:
0
引用数:
0
h-index:
0
MONCH, W
[J].
THIN SOLID FILMS,
1983,
104
(3-4)
: 285
-
299
[33]
CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS
MONCH, W
论文数:
0
引用数:
0
h-index:
0
MONCH, W
[J].
SURFACE SCIENCE,
1983,
132
(1-3)
: 92
-
121
[34]
MONCH W, 1984, FESTKOR-ADV SOLID ST, V24, P229
[35]
A MODEL OF INTERFACE STATES AND CHARGES AT THE SI-SIO2 INTERFACE - ITS PREDICTIONS AND COMPARISONS WITH EXPERIMENTS
NGAI, KL
论文数:
0
引用数:
0
h-index:
0
NGAI, KL
WHITE, CT
论文数:
0
引用数:
0
h-index:
0
WHITE, CT
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(01)
: 320
-
337
[36]
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[37]
INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS
POINDEXTER, EH
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
POINDEXTER, EH
CAPLAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
CAPLAN, PJ
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304
RAZOUK, RR
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(02)
: 879
-
884
[38]
ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION
POINDEXTER, EH
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
POINDEXTER, EH
GERARDI, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
GERARDI, GJ
RUECKEL, ME
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
RUECKEL, ME
CAPLAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CAPLAN, PJ
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
BIEGELSEN, DK
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
BIEGELSEN, DK
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
56
(10)
: 2844
-
2849
[39]
POINDEXTER EH, 1981, SPRINGER SERIES ELEC, V7, P150
[40]
GENERATION ANNEALING KINETICS OF INTERFACE STATES ON OXIDIZED SILICON ACTIVATED BY 10.2-EV PHOTOHOLE INJECTION
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
SAH, CT
SUN, JYC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
SUN, JYC
TZOU, JJT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
TZOU, JJT
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
: 8886
-
8893
←
1
2
3
4
5
6
→